| PART |
Description |
Maker |
| MRFIC1818 |
1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
| MRFIC1870 MRFIC1870D MRFIC1870PP |
3.2 V DCS/PCS GaAs Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication
GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| MRFIC2403 |
2.4 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| HMC478SC70 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz
|
Hittite Microwave Corporation
|
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| UPG2314T5N UPG2314T5N-E2 UPG2314T5N-E2-A |
GaAs HBT INTEGRATED CIRCUIT
|
California Eastern Labs
|
| UPG2417T6M |
GaAs Integrated Circuit SP6T Switch
|
Renesas
|
| HMC552LP411 HMC552LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.6 - 3.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| HMC423MS8 423MS8E HMC423MS808 HMC423MS8E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.6 - 1.3 GHz
|
Hittite Microwave Corporation
|
